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ContactFDMB2307NZ
FDMB2307NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMB2307NZ
- Package: 6-WDFN Exposed Pad
- Datasheet:
- Stock: 5815
- Description: FDMB2307NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Gold |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-WDFN Exposed Pad |
| Number of Pins | 6 |
| Weight | 12.0024mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 800mW |
| Base Part Number | FDMB2307 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.2W |
| Turn On Delay Time | 12 ns |
| FET Type | 2 N-Channel (Dual) Common Drain |
| Transistor Application | SWITCHING |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 5V |
| Rise Time | 34ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 17 ns |
| Turn-Off Delay Time | 32 ns |
| Continuous Drain Current (ID) | 8A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 9.7A |
| Input Capacitance | 1.76nF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 750μm |
| Length | 2mm |
| Width | 3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDMB2307NZ Description
The device is a single package solution designed specifically for lithium-ion battery pack protection circuits and other ultra-portable applications. It features two common-drain N-channel MOSFET, which allows bidirectional current flow in Fairchild's advanced power channel process and state-of-the-art MicroFET lead frame, FDMB2307NZ minimizes the number of these two printed circuit boards.Spaces and s1S2 (open)
FDMB2307NZ Application
Li-lon Battery Pack
FDMB2307NZ Features
Max rs1s2(on)=16.5mΩat VGs=4.5VD=8A Max rs1S2(on)=18 mΩat VGs=4.2 V lo=7.4A Maxrs1S2(on)=21mΩatVGs=3.1VIb=7A Maxs1S2(on)=24mΩat VGs=2.5Vo=6.7A
Low Profile-0.8 mm maximum-in the new package MicroFET 2x3 mm
HBM ESD protection level>2kV(Note3)
RoHS Compliant
