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ContactFDMA6023PZT
FDMA6023PZT datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMA6023PZT
- Package: 6-UDFN Exposed Pad
- Datasheet:
- Stock: 8715
- Description: FDMA6023PZT datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-UDFN Exposed Pad |
| Number of Pins | 6 |
| Weight | 40mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.4W |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.4W |
| Case Connection | DRAIN |
| Turn On Delay Time | 13 ns |
| Power - Max | 700mW |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 60m Ω @ 3.6A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 885pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
| Rise Time | 11ns |
| Fall Time (Typ) | 11 ns |
| Turn-Off Delay Time | 75 ns |
| Continuous Drain Current (ID) | -3.6A |
| Threshold Voltage | -500mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | -500 mV |
| Feedback Cap-Max (Crss) | 150 pF |
| Height | 500μm |
| Length | 2mm |
| Width | 2mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDMA6023PZT Description
The device is a single package solution specifically designed for battery charging switches in cellular phones and other ultra-portable applications. It has two independent P-channel MOSFET with low on-resistance and minimum on-loss. When connected in a typical public power configuration, two-way current flow can be achieved. The MicroFET 2X2 ultra-thin package provides excellent thermal performance with its physical size, making it ideal for linear mode applications.
FDMA6023PZT Features
Max rDS(on) = 60 mΩ at VGS = -4.5 V, ID = -3.6 A
Max rDS(on) = 80 mΩ at VGS = -2.5 V, ID = -3.0 A
Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -2.0 A
Max rDS(on) = 170 mΩ at VGS = -1.5 V, ID = -1.0 A
Low Profile-0.55 mm maximum - in the new package MicroFET 2x2 mm Thin
HBM ESD protection level > 2.4 kV typical (Note 3)
RoHS Compliant
Free from halogenated compounds and antimony oxides
FDMA6023PZT Applications
This product is general usage and suitable for many different applications.
