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ContactFDMA3028N
FDMA3028N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMA3028N
- Package: 6-VDFN Exposed Pad
- Datasheet:
- Stock: 446
- Description: FDMA3028N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-VDFN Exposed Pad |
| Number of Pins | 6 |
| Weight | 40mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 1.5W |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.5W |
| Case Connection | DRAIN |
| Turn On Delay Time | 5.3 ns |
| Power - Max | 700mW |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 68m Ω @ 3.8A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 375pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 5V |
| Rise Time | 3ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 2.5 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 3.8A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Feedback Cap-Max (Crss) | 45 pF |
| Height | 800μm |
| Length | 2mm |
| Width | 2mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDMA3028N Description
The device is a single package solution specially designed to meet the dual switching requirements of cellular phones and other ultra-portable applications. It has two independent N-channel MOSFET with low on-resistance and minimum on-loss. The MicroFET 2x2 package provides excellent thermal performance for its physical size and is ideal for linear mode applications.
FDMA3028N Features
Max. RDS(on) = 68 mΩ at VGS = 4.5 V, ID = 3.8 A
Max. RDS(on) = 88 mΩ at VGS = 2.5 V, ID = 3.4 A
Max. RDS(on) = 123 mΩ at VGS = 1.8 V, ID = 2.9 A
Low profile - 0. 8 mm maximum - in the new package
MicroFET 2x2 mm
RoHS Compliant
FDMA3028N Applications
linear mode applications
