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FDMA2002NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMA2002NZ
- Package: 6-VDFN Exposed Pad
- Datasheet:
- Stock: 660
- Description: FDMA2002NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-VDFN Exposed Pad |
| Number of Pins | 6 |
| Weight | 40mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 123MOhm |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 650mW |
| Current Rating | 2.9A |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.5W |
| Case Connection | DRAIN |
| Turn On Delay Time | 6 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 123m Ω @ 2.9A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 220pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 3nC @ 4.5V |
| Rise Time | 8ns |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 12 ns |
| Continuous Drain Current (ID) | 2.9A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Feedback Cap-Max (Crss) | 30 pF |
| Height | 850μm |
| Length | 2mm |
| Width | 2mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDMA2002NZ Description
The device is a single package solution specially designed to meet the dual switching requirements of cellular phones and other ultra-portable applications. It has two independent N-channel MOSFET with low on-resistance and minimum on-loss. MicroFET 2x2 provides excellent thermal performance in terms of its physical size, making it ideal for linear mode applications.
FDMA2002NZ Features
2.9 A, 30 V
RDS(ON) = 123 m|? @ VGS = 4.5 V
RDS(ON) = 140 m|? @ VGS = 3.0 V
RDS(ON) = 163 m|? @ VGS = 2.5 V
Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
HBM ESD protection level=1.8kV (Note 3)
RoHS Compliant
Free from halogenated compounds and antimonyoxides
FDMA2002NZ Applications
This product is general usage and suitable for many different applications.
