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FDMA1032CZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMA1032CZ
- Package: 6-VDFN Exposed Pad
- Datasheet:
- Stock: 1883
- Description: FDMA1032CZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A 3.1A |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| Rise Time | 11ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 11 ns |
| Turn-Off Delay Time | 37 ns |
| Continuous Drain Current (ID) | 3.7A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 20V |
| Dual Supply Voltage | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1 V |
| Height | 850μm |
| Length | 2mm |
| Width | 2mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Gold |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-VDFN Exposed Pad |
| Number of Pins | 6 |
| Weight | 40mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 68mOhm |
| Additional Feature | ESD PROTECTION |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 20V |
| Max Power Dissipation | 1.4W |
| Current Rating | 3.7A |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.4W |
| Case Connection | DRAIN |
| Power - Max | 700mW |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 68m Ω @ 3.7A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
FDMA1032CZ Description
The device is a single package solution designed for DC/DC'Switching MOsFET in cellular phones and other ultra-portable applications. It has independent N-channel and P-channel MOSFET and low on-board resistance to achieve minimum turn-on loss. The gate charge of each MOSFET is also minimized to allow high-frequency switching directly from the control device. The MicroFET 2x2 package provides excellent thermal performance in its physical size, making it ideal for switching applications.
FDMA1032CZ Features
Q1:N-Channel
3.7A,20V. RpsoN)=68m|?@Vas=4.5V
RDs(ON)=86m|?@VGs=2.5V
Q2: P-Channel
-3.1A-20V.RDs(ON)=95m|?@VGs=-4.5V
RDs(ON)=141m|?@Vas=-2.5V
Low profile -0.8 mm maximum-in the new package MicroFET2x2mm
HBM ESD protection level> 2 kV(Note 3) RoHS Compliant
Free from halogenated compounds and antimony oxides
FDMA1032CZ Applications
This product is general usage and suitable for many different applications.
