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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-VDFN Exposed Pad |
| Number of Pins | 6 |
| Supplier Device Package | 6-MicroFET (2x2) |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Power Dissipation | 1.4W |
| Turn On Delay Time | 9 ns |
| Power - Max | 700mW |
| FET Type | 2 P-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 3A, 4.5V |
| Vgs(th) (Max) @ Id | 1.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 435pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| Rise Time | 11ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 11 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 3A |
| Threshold Voltage | -700mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 20V |
| Input Capacitance | 435pF |
| FET Feature | Logic Level Gate |
| Drain to Source Resistance | 120mOhm |
| Rds On Max | 120 mΩ |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
The device is a single package solution specifically designed for battery charging switches in cellular phones and other ultra-portable applications. It has two independent P-channel MOSFET with low on-resistance and minimum on-loss. When connected in a typical public power configuration, two-way current flow can be achieved. The MicroFET 2x2 ultra-thin package provides excellent thermal performance with its physical size, making it ideal for linear mode applications.
? Battery management
? Load switch
? Battery protection
? Max rDS(on) = 120 m: at VGS = -4.5 V, ID = -3.0 A
? Max rDS(on) = 160 m: at VGS = -2.5 V, ID = -2.5 A
? Max rDS(on) = 240 m: at VGS = -1.8 V, ID = -1.0 A
? Low profile - 0.55 mm maximum - in the new package
MicroFET 2x2 Thin
? RoHS Compliant
? Free from halogenated compounds and antimony
Oxides
Please send RFQ , we will respond immediately.