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ContactFDMA1027P
FDMA1027P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMA1027P
- Package: 6-VDFN Exposed Pad
- Datasheet:
- Stock: 4132
- Description: FDMA1027P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-VDFN Exposed Pad |
| Number of Pins | 6 |
| Weight | 40mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 800mW |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.4W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9 ns |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 120m Ω @ 3A, 4.5V |
| Vgs(th) (Max) @ Id | 1.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 435pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| Rise Time | 11ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 11 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 2.2A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | -20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 750μm |
| Length | 2mm |
| Width | 2mm |
| RoHS Status | ROHS3 Compliant |
FDMA1027P Description
The device is a single package solution specifically designed for battery charging switches in cellular phones and other ultra-portable applications. It has two independent P-channel MOSFET with low on-resistance and minimum on-loss. Bidirectional current flow is possible when connected in a typical common source configuration. MicroFET 2x2 packages provide excellent thermal performance in terms of physical size and are ideal for linear mode applications.
FDMA1027P Features
-3.0 A, -20V
RDS(ON) = 120 m|? @ VGS = -4.5 V
RDS(ON) = 160 m|? @ VGS = -2.5 V
RDS(ON) = 240 m|? @ VGS = -1.8 V
Low Profile - 0.8 mm maximun - in the new package MicroFET 2x2 mm
RoHS compliant
Free from halogenated compounds and antimonyoxides
FDMA1027P Applications
This product is general usage and suitable for many different applications.
