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FDMA1024NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMA1024NZ
- Package: 6-VDFN Exposed Pad
- Datasheet:
- Stock: 5861
- Description: FDMA1024NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Gold |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-VDFN Exposed Pad |
| Number of Pins | 6 |
| Weight | 40mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 54MOhm |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 700mW |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.4W |
| Case Connection | DRAIN |
| Turn On Delay Time | 5.3 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 54m Ω @ 5A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 500pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7.3nC @ 4.5V |
| Rise Time | 2.2ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 2.2 ns |
| Turn-Off Delay Time | 18 ns |
| Continuous Drain Current (ID) | 5A |
| Threshold Voltage | 700mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 5A |
| Drain to Source Breakdown Voltage | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 700 mV |
| Height | 750μm |
| Length | 2mm |
| Width | 2mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDMA1024NZ Description
The device is a single package solution specially designed to meet the dual switching requirements of cellular phones and other ultra-portable applications. It has two independent N-channel MOSFET with low on-resistance and minimum on-loss. The MicroFET 2X2 package provides excellent thermal performance for its physical size and is ideal for linear mode applications.
FDMA1024NZ Features
Max rDS(on) = 54 m|? at VGS = 4.5 V, ID = 5.0 A
Max rDS(on) = 66 m|? at VGS = 2.5 V, ID = 4.2 A
Max rDS(on) = 82 m|? at VGS= 1.8 V, ID = 2.3 A
Max rDS(on) = 114 m|? at VGS = 1.5 V, ID = 2.0 A
HBM ESD protection level = 1.6 kV (Note 3)
Low profile - 0.8 mm maximum - in the new packageMicroFET 2x2 mm
RoHS Compliant
Free from halogenated compounds and antimonyoxides
FDMA1024NZ Applications
This product is general usage and suitable for many different applications.
