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ContactFDM2509NZ
MOSFET 2N-CH 20V 8.7A 2X5MLP
- Manufacturer: ON Semiconductor
- NO: 598-FDM2509NZ
- Package: 6-WFDFN Exposed Pad
- Datasheet:
- Stock: 176
- Description: MOSFET 2N-CH 20V 8.7A 2X5MLP(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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| Parameters | |
|---|---|
| Number of Pins | 6 |
| Supplier Device Package | 6-MicroFET (2x5) |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 20V |
| Max Power Dissipation | 2.2W |
| Current Rating | 8.7A |
| Power Dissipation | 2.2W |
| Turn On Delay Time | 11 ns |
| Power - Max | 800mW |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 8.7A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 8.7A |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
| Rise Time | 15ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 27 ns |
| Continuous Drain Current (ID) | 8.7A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 20V |
| Input Capacitance | 1.2nF |
| FET Feature | Logic Level Gate |
| Drain to Source Resistance | 18mOhm |
| Rds On Max | 18 mΩ |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-WFDFN Exposed Pad |
