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FDG8850NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDG8850NZ
- Package: 6-TSSOP, SC-88, SOT-363
- Datasheet:
- Stock: 132
- Description: FDG8850NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Number of Pins | 6 |
| Weight | 28mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 400mOhm |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 360mW |
| Terminal Form | GULL WING |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 360mW |
| Turn On Delay Time | 4 ns |
| Power - Max | 300mW |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 400m Ω @ 750mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 120pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 1.44nC @ 4.5V |
| Rise Time | 1ns |
| Fall Time (Typ) | 1 ns |
| Turn-Off Delay Time | 9 ns |
| Continuous Drain Current (ID) | 750mA |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 0.75A |
| Drain to Source Breakdown Voltage | 30V |
| Dual Supply Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Height | 1.1mm |
| Length | 2mm |
| Width | 1.25mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDG8850NZ Description
The dual N-channel logic level enhanced mode field effect transistor is produced by proprietary high cell density DMOS technology. This very high-density process is specially tailored to minimize on-resistance. The device is designed for low-voltage applications as a substitute for bipolar digital transistors and small-signal MOSFET. Because there is no need for bias resistors, this dual-digital FET can replace several different digital transistors with different bias resistance values.
FDG8850NZ Features
Max rDS(on) = 0.4|? at VGS = 4.5V, ID = 0.75A
Max rDS(on) = 0.5|? at VGS = 2.7V, ID = 0.67A
Very low level gate drive requirements allowing operationin 3V circuits(VGS(th) <1.5V)
Very small package outline SC70-6
RoHS Compliant
FDG8850NZ Applications
This product is general usage and suitable for many different applications.
