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FDG8842CZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDG8842CZ
- Package: 6-TSSOP, SC-88, SOT-363
- Datasheet:
- Stock: 2351
- Description: FDG8842CZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Length | 2mm |
| Width | 1.25mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Number of Pins | 6 |
| Weight | 28mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 400MOhm |
| Subcategory | Other Transistors |
| Max Power Dissipation | 300mW |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 360mW |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 400m Ω @ 750mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 120pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 750mA 410mA |
| Gate Charge (Qg) (Max) @ Vgs | 1.44nC @ 4.5V |
| Rise Time | 16ns |
| Drain to Source Voltage (Vdss) | 30V 25V |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | 750mA |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | -8V |
| Drain Current-Max (Abs) (ID) | 0.75A |
| Drain to Source Breakdown Voltage | 25V |
| Dual Supply Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1 V |
| Height | 1mm |
FDG8842CZ Description
These Numbp channel logic level enhanced mode field effect transistors are manufactured using on Semiconductor's proprietary high cell density DMOS technology. This very high-density process is specially tailored to minimize on-resistance. The device is specially designed for low-voltage applications as a substitute for bipolar digital transistors and small-signal MOSFET. Because there is no need for bias resistors, this dual-digital FET can replace several different digital transistors with different bias resistance values.
FDG8842CZ Features
Q1: N-Channel
Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A
Q2: P-Channel
Max rDS(on) = 1.1Ω at VGS = –4.5V, ID = –0.41A
Max rDS(on) = 1.5Ω at VGS = –2.7V, ID = –0.25A
Very low level gate drive requirements allowing direct
operation in 3V circuits(VGS(th) <1.5V)
Very small package outline SC70-6
RoHS Compliant
FDG8842CZ Applications
low-voltage applications
