FDG6332C-F085P

DUAL NP MOS SC70-6 20V


  • Manufacturer: ON Semiconductor
  • NO: 598-FDG6332C-F085P
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: pdf
  • Stock: 10012
  • Description: DUAL NP MOS SC70-6 20V(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Lifecycle Status ACTIVE, NOT REC (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Position DUAL
Terminal Form GULL WING
JESD-30 Code R-PDSO-G6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 300mW Ta
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 300m Ω @ 700mA, 4.5V, 420m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 113pF @ 10V 114pF @ 10V
Current - Continuous Drain (Id) @ 25°C 700mA Ta 600mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V, 2nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain Current-Max (Abs) (ID) 0.7A
Drain-source On Resistance-Max 0.3Ohm
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 0.3W
FET Feature Standard
RoHS Status RoHS Compliant

In Stock

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