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ContactFDG6332C
FDG6332C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDG6332C
- Package: 6-TSSOP, SC-88, SOT-363
- Datasheet:
- Stock: 3745
- Description: FDG6332C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 300MOhm |
| Subcategory | Other Transistors |
| Max Power Dissipation | 300mW |
| Terminal Form | GULL WING |
| Current Rating | 700mA |
| Number of Elements | 2 |
| Voltage | 20V |
| Element Configuration | Dual |
| Current | 7A |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300mW |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 300m Ω @ 700mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 113pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 700mA 600mA |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 4.5V |
| Rise Time | 14ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 14 ns |
| Turn-Off Delay Time | 6 ns |
| Continuous Drain Current (ID) | 700mA |
| Threshold Voltage | 1.1V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Height | 1.1mm |
| Length | 2mm |
| Width | 1.25mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
The FDG6332C is a N/P-channel MOSFET produced using advanced PowerTrench? process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive and packages are impractical. It is suitable for use with DC-to-DC converters, load switch and LCD display inverter applications.
FDG6332C Features
Low gate charge
High performance Trench technology for extremely low RDS (ON)
Small footprint
Low profile
FDG6332C Applications
DC/DC Converter
Load Switch
LCD Display Inverter
Industrial
Power Management
