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FDG6322C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDG6322C
- Package: 6-TSSOP, SC-88, SOT-363
- Datasheet:
- Stock: 9014
- Description: FDG6322C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 55 ns |
| Continuous Drain Current (ID) | 220mA |
| Threshold Voltage | 850mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 25V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 850 mV |
| Height | 1mm |
| Length | 2mm |
| Width | 1.25mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Number of Pins | 6 |
| Weight | 28mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 4Ohm |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | Other Transistors |
| Max Power Dissipation | 300mW |
| Terminal Form | GULL WING |
| Current Rating | 220mA |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300mW |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4 Ω @ 220mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 220mA 410mA |
| Gate Charge (Qg) (Max) @ Vgs | 0.4nC @ 4.5V |
| Rise Time | 8ns |
FDG6322C Description
These dual Numbp channel logic level enhanced mode field effect transistors are produced using proprietary high cell density DMOS technology. This very high-density process is specially tailored to minimize on-resistance. The device is designed for low-voltage applications as a substitute for bipolar digital transistors and small-signal MOSFET. Because there is no need for bias resistors, this dual-digital FET can replace several different digital transistors with different bias resistance values.
FDG6322C Features
N-Ch 0.22 A, 25 V,
RDS(ON) = 4.0 |? @ VGS= 4.5 V,
RDS(ON) = 5.0 |? @ VGS= 2.7 V
P-Ch -0.41 A,-25V,
RDS(ON) = 1.1 |? @ VGS= -4.5V,
RDS(ON) = 1.5 |? @ VGS= -2.7V.
Very small package outline SC70-6.
Very low level gate drive requirements allowing direct operation in 3 V circuits (V GS(th) < 1.5 V)
Gate-Source Zener for ESD ruggedness (>6k V Human Body Model).
FDG6322C Applications
This product is general usage and suitable for many different applications.
