FDG6318PZ

FDG6318PZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FDG6318PZ
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: pdf
  • Stock: 9839
  • Description: FDG6318PZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 28mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 780MOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -20V
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -500mA
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 10 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 780m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 85.4pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 1.62nC @ 4.5V
Rise Time 13ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 500mA
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.5A
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1mm
Length 2mm
Width 1.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount

FDG6318PZ   Description


These dual P-channel logic level enhancement modes MOSFET are tailor-made to minimize on-resistance. The device is specially designed for bipolar digital transistors and small signal MOSFET.


FDG6318PZ   Features

 

-0.5A, -20V

RDS(ON) = 780 mΩ @ VGS = -4.5V

RDS(ON) = 1200 mΩ @ VGS = -2.5V

Very low level gate drive requirements allowing directoperation in 3V circuits (VGS(TH) < 1.5V).

Gate-Source Zener for ESD ruggedness (>1.4kV HumanBody Model).

Compact industry standard SC-70-6 surface mountpackage.


FDG6318PZ   Applications


This product is general usage and suitable for many different applications.

 


In Stock

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