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FDG6318P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDG6318P
- Package: 6-TSSOP, SC-88, SOT-363
- Datasheet:
- Stock: 5042
- Description: FDG6318P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Rds On (Max) @ Id, Vgs | 780m Ω @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 83pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 1.2nC @ 4.5V |
| Rise Time | 12ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 6 ns |
| Continuous Drain Current (ID) | 500mA |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 0.5A |
| Drain to Source Breakdown Voltage | -20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 1mm |
| Length | 2mm |
| Width | 1.25mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Number of Pins | 6 |
| Weight | 28mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2003 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 780MOhm |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -20V |
| Max Power Dissipation | 300mW |
| Terminal Form | GULL WING |
| Current Rating | -500mA |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300mW |
| Turn On Delay Time | 6 ns |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
FDG6318P Description
These dual P-channel logic level enhancement modes MOSFET are produced using on Semiconductor's advanced PowerTritch process, which is tailor-made to minimize on-resistance. The device is designed for low-voltage applications as a substitute for bipolar digital transistors and small-signal MOSFET.
FDG6318P Features
-0.5A, -20V
RDS(ON) = 780 mΩ @ VGS = -4.5V
RDS(ON) = 1200 mΩ @ VGS = -2.5V
Very low level gate drive requirements allowing directoperation in 3V circuits (VGS(th) < 1.5V)
Compact industry standard SC70-6 surface mountpackage
FDG6318P Applications
This product is general usage and suitable for many different applications.
