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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Number of Pins | 6 |
| Supplier Device Package | SC-88 (SC-70-6) |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2002 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 25V |
| Max Power Dissipation | 300mW |
| Current Rating | 500mA |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Power Dissipation | 300mW |
| Power - Max | 300mW |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 500mA |
| Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 4.5V |
| Rise Time | 8.5ns |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time (Typ) | 8.5 ns |
| Turn-Off Delay Time | 17 ns |
| Continuous Drain Current (ID) | 500mA |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 25V |
| Input Capacitance | 50pF |
| FET Feature | Logic Level Gate |
| Drain to Source Resistance | 340mOhm |
| Rds On Max | 450 mΩ |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
The dual N-Channel logic level enhancement mode field effect transistors in question were created using the high cell density, DMOS technology that is exclusive to Fairchild. This extremely dense technique is specifically designed to reduce on-state resistance. In place of small signal MOSFETs and bipolar digital transistors, this device was created specifically for low voltage applications.
Very low level gate drive needs (VGS(th) 1.5 V) enable direct operation in 3 V circuits.
For ESD robustness (>6kV human body model), use a gate-source zener.
compact SC70-6 surface mount package, which is industry standard.
Switching applications
Please send RFQ , we will respond immediately.