FDG6313N

FDG6313N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FDG6313N
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: pdf
  • Stock: 953
  • Description: FDG6313N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Supplier Device Package SC-88 (SC-70-6)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 25V
Max Power Dissipation 300mW
Current Rating 500mA
Number of Elements 2
Element Configuration Dual
Power Dissipation 300mW
Power - Max 300mW
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C 500mA
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V
Rise Time 8.5ns
Drain to Source Voltage (Vdss) 25V
Fall Time (Typ) 8.5 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 500mA
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 25V
Input Capacitance 50pF
FET Feature Logic Level Gate
Drain to Source Resistance 340mOhm
Rds On Max 450 mΩ
RoHS Status RoHS Compliant
Lead Free Lead Free

FDG6313N Description


The dual N-Channel logic level enhancement mode field effect transistors in question were created using the high cell density, DMOS technology that is exclusive to Fairchild. This extremely dense technique is specifically designed to reduce on-state resistance. In place of small signal MOSFETs and bipolar digital transistors, this device was created specifically for low voltage applications.



FDG6313N Features


  • Very low level gate drive needs (VGS(th) 1.5 V) enable direct operation in 3 V circuits.

  • For ESD robustness (>6kV human body model), use a gate-source zener.

  • compact SC70-6 surface mount package, which is industry standard.



FDG6313N Applications


Switching applications


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