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FDG6306P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDG6306P
- Package: 6-TSSOP, SC-88, SOT-363
- Datasheet:
- Stock: 3186
- Description: FDG6306P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Number of Pins | 6 |
| Weight | 28mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2001 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -20V |
| Max Power Dissipation | 300mW |
| Terminal Form | GULL WING |
| Current Rating | -600mA |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300mW |
| Turn On Delay Time | 5.5 ns |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 420m Ω @ 600mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 114pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2nC @ 4.5V |
| Rise Time | 14ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 14 ns |
| Turn-Off Delay Time | 6 ns |
| Continuous Drain Current (ID) | 600mA |
| Threshold Voltage | -1.2V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | -20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Height | 1.1mm |
| Length | 2mm |
| Width | 1.25mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
FDG6306P Description
This P-channel 2.5V MOSFET is a rugged gate version of advanced PowerTritch technology. It is optimized for power management applications with a wide range of gate drive voltages (2.5V-12V).
FDG6306P Features
¨C0.6 A, ¨C20 V.
RDS(ON)= 420 m|? @ VGS = ¨C4.5 V
RDS(ON) = 630 m|? @ VGS = ¨C2.5 V
Low gate charge
High performance trench technology for extremelylow RDS(ON)
Compact industry standard SC70-6 surface mountpackage
FDG6306P Applications
This product is general usage and suitable for many different applications.
