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ContactFDD3510H
FDD3510H datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDD3510H
- Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Datasheet:
- Stock: 3981
- Description: FDD3510H datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 80MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.3W |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| JESD-30 Code | R-PSSO-G4 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.1W |
| FET Type | N and P-Channel, Common Drain |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 80m Ω @ 4.3A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 40V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A 2.8A |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| Rise Time | 3ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 5 ns |
| Turn-Off Delay Time | 25 ns |
| Continuous Drain Current (ID) | 2.8A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 4.3A |
| Drain to Source Breakdown Voltage | 80V |
| Avalanche Energy Rating (Eas) | 37 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDD3510H Description
These dual N and P channel enhanced mode power MOSFET are manufactured using on Semiconductor's advanced PowerTritch process, which is customized to minimize on-resistance while maintaining excellent switching performance.
FDD3510H Features
Q1: N-Channel
Max rDS(on) = 80m? at VGS = 10V, ID = 4.3A
Max rDS(on) = 88m? at VGS = 6V, ID = 4.1A
Q2: P-Channel
Max rDS(on) = 190m? at VGS = -10V, ID = -2.8A
Max rDS(on) = 224m? at VGS = -4.5V, ID = -2.6A
100% UIL Tested
RoHS Compliant
FDD3510H Applications
Inverter
H-Bridge
