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FDC6561AN datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDC6561AN
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 2012
- Description: FDC6561AN datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 95mOhm |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 960mW |
| Terminal Form | GULL WING |
| Current Rating | 2.5A |
| Number of Elements | 2 |
| Voltage | 30V |
| Element Configuration | Dual |
| Current | 24A |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 960mW |
| Turn On Delay Time | 6 ns |
| Power - Max | 700mW |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 95m Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 220pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 5V |
| Rise Time | 10ns |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 12 ns |
| Continuous Drain Current (ID) | 2.5A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Dual Supply Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1.8 V |
| Height | 1mm |
| Length | 3mm |
| Width | 1.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDC6561AN Description
These N-channel logic level MOSFET are manufactured using an advanced PowerTritch process that is customized to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are ideal for all applications that require small size but especially low-cost DC/DC conversions in battery power systems.
FDC6561AN Features
2.5 A, 30 V
RDS(ON) = 0.095 |? @ VGS = 10 V
RDS(ON) = 0.145 |? @ VGS = 4.5 V
Very fast switching
Low gate charge (2.1nC typical
SuperSOT?-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)
FDC6561AN Applications
This product is general usage and suitable for many different applications.
