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FDC6506P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDC6506P
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 2317
- Description: FDC6506P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 170m Ω @ 1.8A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 3.5nC @ 10V |
| Rise Time | 8ns |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 14 ns |
| Continuous Drain Current (ID) | 1.8A |
| Threshold Voltage | -1.8V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -30V |
| Dual Supply Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Height | 1.1mm |
| Length | 3mm |
| Width | 1.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Weight | 36mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1999 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 170MOhm |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -30V |
| Max Power Dissipation | 960mW |
| Terminal Form | GULL WING |
| Current Rating | -1.8A |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 960mW |
| Turn On Delay Time | 7 ns |
| Power - Max | 700mW |
FDC6506P Description
These P-Channel logic level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
FDC6506P Features
Low gate charge (2.3nC typical)
Fast switching speed
ROHS3 Compliant
No SVHC
Lead Free
High performance trench technology for extremely low RDS(ON)
SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)
FDC6506P Applications
Load switch
Battery protection
Power management
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
