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ContactFDC6420C
FDC6420C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDC6420C
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 7314
- Description: FDC6420C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Weight | 36mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 70MOhm |
| Terminal Finish | TIN (SN) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 700mW |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 3A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 960mW |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 70m Ω @ 3A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 324pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3A 2.2A |
| Gate Charge (Qg) (Max) @ Vgs | 4.6nC @ 4.5V |
| Rise Time | 12ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 10 ns |
| Continuous Drain Current (ID) | 3A |
| Threshold Voltage | 900mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 3A |
| Drain to Source Breakdown Voltage | 20V |
| Dual Supply Voltage | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 900 mV |
| Height | 900μm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDC6420C Description
These N and P-Channel MOSFETs are made with the PowerTrench? process, which has been specifically optimized to reduce on-state resistance while maintaining exceptional switching performance. These devices were created to provide excellent power dissipation in a tiny container for situations where the larger, more expensive SO-8 and TSSOP-8 packages are impracticable.
FDC6420C Features
Q1 3.0 A, 20V
RDS(on) = 70 mΩ@ VGS = 4.5 V
RDS(on) = 95 mΩ @ VGS = 2.5 V
Q2 –2.2 A, 20V.
RDS(on) = 125 mΩ@ VGS = -4.5 V
RDS(on) = 190 mΩ @ VGS = -2.5 V
Low gate charge
High-performance trench technology for extremely low RDS(ON)
super soft –6 package: small footprint (72% smaller than-8); low profile (1mm thick).
FDC6420C Applications
General-purpose amplifier
Switching applications
Power management
Industrial
