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ContactFDC6401N
FDC6401N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDC6401N
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 7883
- Description: FDC6401N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Turn On Delay Time | 5 ns |
| Power - Max | 700mW |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 70m Ω @ 3A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 324pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4.6nC @ 4.5V |
| Rise Time | 7ns |
| Fall Time (Typ) | 1.6 ns |
| Turn-Off Delay Time | 13 ns |
| Continuous Drain Current (ID) | 3A |
| Threshold Voltage | 900mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 3A |
| Drain to Source Breakdown Voltage | 20V |
| Dual Supply Voltage | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Standard |
| Nominal Vgs | 900 mV |
| Height | 1.1mm |
| Length | 3mm |
| Width | 1.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Weight | 36mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 70MOhm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 20V |
| Max Power Dissipation | 960mW |
| Terminal Form | GULL WING |
| Current Rating | 3A |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 960mW |
FDC6401N MOSFET Description
The FDC6401N MOSFET has a Drain-Source voltage of 20 V (max) so it is suitable for switching low to medium power loads. It is capsuled within the TSOT-23 6-pin package and is able to operate over -500~150 ℃. It is specified with low input capacitance so it provides credible dynamic performance, too.
FDC6401N MOSFET Features
Low gate charge
RDS(ON) = 95 mΩ @ VGS = 2.5 V
3.0 A, 20 V
High power and current handling capability
RDS(ON) = 70 mΩ @ VGS = 4.5 V
High-performance trench technology for extremely low RDS(on)
FDC6401N MOSFET Applications
Power Management
Battery Protection
DC/DC Converter
Switching
Servo Control
