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FDC6333C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDC6333C
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 4669
- Description: FDC6333C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Weight | 36mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 95MOhm |
| Subcategory | Other Transistors |
| Max Power Dissipation | 960mW |
| Terminal Form | GULL WING |
| Current Rating | 2.5A |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 960mW |
| Turn On Delay Time | 4.5 ns |
| Power - Max | 700mW |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 95m Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 282pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A 2A |
| Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 10V |
| Rise Time | 13ns |
| Drain to Source Voltage (Vdss) | 30V |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 13 ns |
| Turn-Off Delay Time | 11 ns |
| Continuous Drain Current (ID) | 2.5A |
| Threshold Voltage | 1.8V |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | -30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1.8 V |
| Height | 1mm |
| Length | 3mm |
| Width | 1.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDC6333C Description
The FDC6333C is an N/P-channel MOSFET produced using an advanced PowerTrench? process. The Onsemi FDC6333C has been specially tailored to minimize ON-state resistance and yet maintain superior switching performance. It has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. The MOSFET FDC6333C is suitable for use with DC-to-DC converter, load switch, and LCD display inverter applications. The FDC6333C is offered in the SOT-23-3 package. It is specified for operation from –55°C to +150°C.
FDC6333C Features
Q1 2.5 A, 30V
RDS(on) = 95 mΩ@ VGS = 10 V
RDS(on) = 150 mΩ @ VGS = 4.5 V
Q2 –2.0 A, 30V.
RDS(on) = 150 mΩ@ VGS = -10 V
RDS(on) = 220 mΩ @ VGS = -4.5 V
Low gate charge
High-performance trench technology for extremely low RDS(ON)
SuperSOT –6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).
FDC6333C Applications
Industrial
Power Management
DC/DC converter
Load switch
LCD display inverter
