FDC6327C

FDC6327C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FDC6327C
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: pdf
  • Stock: 324
  • Description: FDC6327C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
FET Technology METAL-OXIDE SEMICONDUCTOR
Turn-Off Delay Time 14 ns
Transistor Element Material SILICON
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 80m Ω @ 2.7A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V
Rise Time 14ns
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
FET Feature Logic Level Gate
Nominal Vgs 900 mV
Current - Continuous Drain (Id) @ 25°C 2.7A 1.9A
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Packaging Tape & Reel (TR)
Published 2000
Series PowerTrench®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Length 3mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Current Rating 2.7A
Radiation Hardening No
Number of Pins 6
Package / Case SOT-23-6 Thin, TSOT-23-6
REACH SVHC No SVHC
Height 1.1mm
Width 1.7mm
Resistance 80MOhm
Mounting Type Surface Mount
Weight 36mg
Operating Temperature -55°C~150°C TJ
Operating Mode ENHANCEMENT MODE
Terminal Finish TIN (SN)
Terminal Form GULL WING
Number of Channels 2
Subcategory Other Transistors
Max Power Dissipation 960mW
Power - Max 700mW
Number of Elements 2
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Element Configuration Dual
Power Dissipation 960mW
Threshold Voltage 900mV
Continuous Drain Current (ID) 1.9A
Max Junction Temperature (Tj) 150°C
Transistor Application SWITCHING


Product Description:

The FDC6327C is a high-performance N-channel MOSFET designed to provide efficient switching and amplification of electrical signals in various electronic applications. With its advanced design and features, this MOSFET offers reliable performance and versatility in different circuit designs.


Features:


N-Channel MOSFET: The FDC6327C is an N-channel enhancement-mode MOSFET, commonly used for high-side or low-side switching applications in electronic circuits.


Low On-Resistance: This MOSFET is characterized by its low on-resistance, which minimizes power losses and heat generation during switching, making it suitable for high-efficiency applications.


Small Signal Switching: The FDC6327C is suitable for small signal switching, amplification, and signal routing tasks in electronic circuits.


SOT-23 Package: The MOSFET is packaged in the compact SOT-23 surface-mount package, which is widely used and designed for easy integration into various circuit layouts.


RoHS Compliant: The FDC6327C adheres to the Restriction of Hazardous Substances (RoHS) directive, ensuring its environmental friendliness and safety in different applications.


Applications:


Power Management: The FDC6327C can be used in power management circuits for switching and controlling power distribution.


Voltage Regulation: In voltage regulation circuits, this MOSFET can be used for efficient power conversion and voltage control.


Motor Control: MOSFETs are often used in motor control applications for precise speed and direction control of motors.


LED Lighting: MOSFETs can be used in LED lighting applications for dimming and switching LED arrays.


Signal Amplification: The FDC6327C can be utilized for small signal amplification tasks in audio and signal processing circuits.


Switching Circuits: This MOSFET can be used in various switching circuits, such as relay drivers, analog switches, and signal routing applications.


Battery Management: In battery-powered devices, MOSFETs play a role in efficiently managing power consumption and distribution.


Load Switching: MOSFETs are commonly used as load switches to control the power supply to different components or subsystems in electronic devices.


Voltage Level Shifting: MOSFETs can also be used for voltage level shifting tasks in various circuit configurations.


In summary, the FDC6327C N-channel MOSFET offers efficient switching and signal amplification capabilities in a compact SOT-23 package. Whether you're working on power management, motor control, LED lighting, or signal amplification applications, this MOSFET provides reliable and versatile performance to enhance the efficiency and functionality of your electronic designs.


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