FDC6304P

FDC6304P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi

Manufacturer: ON Semiconductor
NO: 598-FDC6304P
Package: SOT-23-6 Thin, TSOT-23-6
Datasheet:
Stock: 3738
Description: FDC6304P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Weight	36mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	1.1Ohm
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	-25V
Max Power Dissipation	700mW
Terminal Form	GULL WING
Current Rating	-460mA
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	900mW
Turn On Delay Time	7 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.1 Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	62pF @ 10V
Current - Continuous Drain (Id) @ 25°C	460mA
Gate Charge (Qg) (Max) @ Vgs	1.5nC @ 4.5V
Rise Time	8ns
Drain to Source Voltage (Vdss)	25V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	-460mA
Threshold Voltage	-860mV
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-25V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FDC6304P Description

These P-channel enhanced mode field effect transistors are produced using on Semiconductor's proprietary high cell density. DMOS technology. This very high-density process is tailor-made to minimize on-resistance under low gate driving conditions. The device is designed for battery-powered applications such as laptops and mobile phones. The device has excellent on-resistance even at a gate drive voltage as low as 2.5 volts.

FDC6304P Features

-25V.-0.46 Acontinuous-1.0APeak. RpsiON=1.5|?@Vas=-2.7V RD8ION=1.1|?@Vas=-4.5V.

Very low level gate drive requirements allowing direc! operation in 3V circuits. Vcs<1.5V. Gate-Source Zener for ESD ruggedness.>6kV Human Body Model.