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FDC6301N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDC6301N
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 7220
- Description: FDC6301N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Weight | 36mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 4Ohm |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 25V |
| Max Power Dissipation | 900mW |
| Terminal Form | GULL WING |
| Current Rating | 220mA |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 900mW |
| Turn On Delay Time | 5 ns |
| Power - Max | 700mW |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4 Ω @ 400mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 0.7nC @ 4.5V |
| Rise Time | 4.5ns |
| Fall Time (Typ) | 4.5 ns |
| Turn-Off Delay Time | 4 ns |
| Continuous Drain Current (ID) | 220mA |
| Threshold Voltage | 850mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 25V |
| Dual Supply Voltage | 25V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 850 mV |
| Height | 1mm |
| Length | 3mm |
| Width | 1.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDC6301N Description
These dual N-channel logic level enhanced mode field effect transistors are produced using proprietary high cell density DMOS technology. This very high-density process is specially tailored to minimize on-resistance. This device is specially designed for low-voltage applications as a substitute for digital transistors. Because there is no need for bias resistors, these N-channel FET can replace several digital transistors with various bias resistors.
FDC6301N Features
25 V, 0.22 A continuous, 0.5 A Peak
RDS(ON) = 5 |? @ VGS= 2.7 V
RDS(ON) = 4 |? @ VGS= 4.5 V
Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V
Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
FDC6301N Applications
This product is general usage and suitable for many different applications.
