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ContactFDC3601N
FDC3601N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDC3601N
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 2543
- Description: FDC3601N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Number of Pins | 6 |
| Weight | 36mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 500MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 100V |
| Max Power Dissipation | 960mW |
| Terminal Form | GULL WING |
| Current Rating | 1A |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 960mW |
| Turn On Delay Time | 8 ns |
| Power - Max | 700mW |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 500m Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 153pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V |
| Rise Time | 4ns |
| Fall Time (Typ) | 4 ns |
| Turn-Off Delay Time | 11 ns |
| Continuous Drain Current (ID) | 1A |
| Threshold Voltage | 2.6V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 1A |
| Drain to Source Breakdown Voltage | 100V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| Height | 1mm |
| Length | 3mm |
| Width | 1.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
FDC3601N Description
These N-channel 100V MOSFET are manufactured using an advanced PowerTrack process tailored to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are designed to provide excellent power consumption in a very small footprint and are suitable for impractical applications in larger and more expensive SO-8 and TSSOP-8 packages.
FDC3601N Features
1.0 A, 100 V
RDS(on) = 500 m|?@ VGS = 10 V
RDS(on) = 550 m|? @ VGS = 6 V
Low gate charge (3.7nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
SuperSOT?-6 package: small footprint 72%(smaller than standard SO-8); low profile (1mm thick)
FDC3601N Applications
This product is general usage and suitable for many different applications.
