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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | EPM15 |
| Supplier Device Package | EPM15 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Series | Power-SPM™ |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 40A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 11535pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 80A |
| Gate Charge (Qg) (Max) @ Vgs | 295nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| FET Feature | Standard |
FD6M016N03 is one of the Power-SPMTM series products newly developed and designed by Fairchild, which is most suitable for more compact and efficient synchronous rectification applications such as Internet server power supply and telecom system power supply. For higher efficiency, it includes a built-in very low RDS (conduction) MOSFET. The power scan resonance device can be used on the secondary side of the PWM transformer of the forward / bridge converter to provide high current rectifier in the output voltage range from 12V to 5V. With this product, the secondary side of the power system can be designed with reduced parasitic components to minimize voltage spikes and EMI noise.
? High Current Isolated Converter
? Distributed Power Architectures
? Synchronous rectifivation
? DC/DC Converter
? Battery supplied application
? ORing MOSFET
? VDSS = 30V
? QG(TOTAL) = 132nC(Typ.), VGS = 5V
? RDS(ON) = 1.3mΩ(Typ.), VGS = 10V, ID = 40A
? Low Miller Charge
? Low Qrr Body Diode
? UIS Capability (Single Pulse and Repetitive Pulse)
? Fully Isolated package
Please send RFQ , we will respond immediately.