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FCX658ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-FCX658ATA
- Package: TO-243AA
- Datasheet:
- Stock: 9913
- Description: FCX658ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 3 |
| Weight | 51.993025mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 400V |
| Max Power Dissipation | 1W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 50MHz |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | FCX658 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 50MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 400V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 200mA 10V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 400V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | 200mV |
| Max Breakdown Voltage | 400V |
| Collector Base Voltage (VCBO) | 400V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 500mA |
| Height | 1.5mm |
| Length | 4.5mm |
| Width | 2.5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FCX658ATA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 35 @ 200mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 10mA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In this part, there is a transition frequency of 50MHz.This device can take an input voltage of 400V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
FCX658ATA Features
the DC current gain for this device is 35 @ 200mA 10V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
FCX658ATA Applications
There are a lot of Diodes Incorporated FCX658ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
