FCX596TA

FCX596TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-FCX596TA
  • Package: TO-243AA
  • Datasheet: pdf
  • Stock: 595
  • Description: FCX596TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number FCX596
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 200V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 250mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 350mV @ 25mA, 250mA
Collector Emitter Breakdown Voltage 200V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage -350mV
Max Breakdown Voltage 200V
Collector Base Voltage (VCBO) 220V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -300mA
Height 1.5mm
Length 4.5mm
Width 2.5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC -200V
Max Power Dissipation 1W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating -300mA
Frequency 150MHz

FCX596TA Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 85 @ 250mA 10V.This design offers maximum flexibility with a collector emitter saturation voltage of -350mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 350mV @ 25mA, 250mA.For high efficiency, the continuous collector voltage must be kept at -300mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -300mA for this device.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can be broken down at a voltage of 200V volts.Maximum collector currents can be below 300mA volts.

FCX596TA Features


the DC current gain for this device is 85 @ 250mA 10V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 25mA, 250mA
the emitter base voltage is kept at 5V
the current rating of this device is -300mA
a transition frequency of 150MHz

FCX596TA Applications


There are a lot of Diodes Incorporated FCX596TA applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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