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FCX591ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-FCX591ATA
- Package: TO-243AA
- Datasheet:
- Stock: 319
- Description: FCX591ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 4 |
| Weight | 51.993025mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -40V |
| Max Power Dissipation | 1W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -1A |
| Frequency | 150MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-F3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 150MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 150MHz |
| Collector Emitter Saturation Voltage | -500mV |
| Max Breakdown Voltage | 40V |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -1A |
| Height | 1.5mm |
| Length | 4.5mm |
| Width | 2.5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
FCX591ATA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100mA 5V.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.Single BJT transistor is recommended to keep the continuous collector voltage at -1A in order to achieve high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As a result, the part has a transition frequency of 150MHz.A breakdown input voltage of 40V volts can be used.In extreme cases, the collector current can be as low as 1A volts.
FCX591ATA Features
the DC current gain for this device is 300 @ 100mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz
FCX591ATA Applications
There are a lot of Diodes Incorporated FCX591ATA applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
