FCX458TA

FCX458TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-FCX458TA
  • Package: TO-243AA
  • Datasheet: pdf
  • Stock: 9966
  • Description: FCX458TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC 400V
Max Power Dissipation 1W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 225mA
Frequency 50MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number FCX458
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 225mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 6mA, 50mA
Collector Emitter Breakdown Voltage 400V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 400V
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 225mA
Height 1.5mm
Length 4.5mm
Width 2.5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FCX458TA Overview


DC current gain in this device equals 100 @ 50mA 10V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.When VCE saturation is 500mV @ 6mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltages of 225mA should be maintained to achieve high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 225mA.As a result, the part has a transition frequency of 50MHz.Input voltage breakdown is available at 400V volts.Single BJT transistor is possible for the collector current to fall as low as 225mA volts at Single BJT transistors maximum.

FCX458TA Features


the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 225mA
a transition frequency of 50MHz

FCX458TA Applications


There are a lot of Diodes Incorporated FCX458TA applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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