FC8V22040L

MOSFET Nch+Nch MOS FET


  • Manufacturer: Panasonic Electronic Components
  • NO: 590-FC8V22040L
  • Package: 8-SMD, Flat Lead
  • Datasheet: pdf
  • Stock: 1780
  • Description: MOSFET Nch+Nch MOS FET(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

In Stock

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RFQ (Request for Quotations)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -40°C~85°C TJ
Packaging Cut Tape (CT)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation 1W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number FC8V2204
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 600 ps
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Drain to Source Voltage (Vdss) 24V
Turn-Off Delay Time 4.4 μs
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 8A
Drain-source On Resistance-Max 0.02Ohm
Drain to Source Breakdown Voltage 24V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 830μm
Length 2.9mm
Width 2.4mm
RoHS Status RoHS Compliant

In Stock

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