EPC2014

GaNFET (Gallium Nitride) N-Channel Cut Tape (CT) 16mOhm @ 5A, 5V +6V, -5V 325pF @ 20V 2.8nC @ 5V 40V Die


  • Manufacturer: EPC
  • NO: 257-EPC2014
  • Package: Die
  • Datasheet: pdf
  • Stock: 17411
  • Description: GaNFET (Gallium Nitride) N-Channel Cut Tape (CT) 16mOhm @ 5A, 5V +6V, -5V 325pF @ 20V 2.8nC @ 5V 40V Die (Kg)

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  • Delivery: Delivery
  • Payment: payment

In Stock

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IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die Outline (5-Solder Bar)
Operating Temperature -40°C~150°C TJ
Packaging Cut Tape (CT)
Series eGaN®
Published 2013
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology GaNFET (Gallium Nitride)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16mOhm @ 5A, 5V
Vgs(th) (Max) @ Id 2.5V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 20V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 5V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) +6V, -5V
Continuous Drain Current (ID) 10A
Input Capacitance 325pF
Rds On Max 16 mΩ
RoHS Status ROHS3 Compliant

In Stock

Please send RFQ , we will respond immediately.