ECH8601M-TL-H

MOSFET NCH+NCH 2.5V DRIVE SERIES


  • Manufacturer: ON Semiconductor
  • NO: 598-ECH8601M-TL-H
  • Package: 8-SMD, Flat Lead
  • Datasheet: pdf
  • Stock: 4852
  • Description: MOSFET NCH+NCH 2.5V DRIVE SERIES(Kg)

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  • Delivery: Delivery
  • Payment: payment

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation 1.5W
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 300 ns
FET Type 2 N-Channel (Dual) Common Drain
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 1mA
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 8A Ta
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
Rise Time 1μs
Drain to Source Voltage (Vdss) 24V
Fall Time (Typ) 1.8 μs
Turn-Off Delay Time 3 μs
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 8A
Drain-source On Resistance-Max 0.03Ohm
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 24V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 2.5V Drive
Height 900μm
Length 2.9mm
Width 2.3mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

In Stock

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