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DZT955-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-DZT955-13
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 4616
- Description: DZT955-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 150MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | DZT955 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 150MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 140V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A 5V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 370mV @ 300mA, 3A |
| Collector Emitter Breakdown Voltage | 140V |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 140V |
| Collector Base Voltage (VCBO) | 180V |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 1.6mm |
| Length | 6.5mm |
| Width | 3.5mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
DZT955-13 Overview
This device has a DC current gain of 100 @ 1A 5V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 370mV @ 300mA, 3A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.There is a transition frequency of 150MHz in the part.Input voltage breakdown is available at 140V volts.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
DZT955-13 Features
the DC current gain for this device is 100 @ 1A 5V
the vce saturation(Max) is 370mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
DZT955-13 Applications
There are a lot of Diodes Incorporated DZT955-13 applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
