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DXTP560BP5-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-DXTP560BP5-13
- Package: PowerDI™ 5
- Datasheet:
- Stock: 10058
- Description: DXTP560BP5-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerDI™ 5 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Other Transistors |
| Max Power Dissipation | 2.8W |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | DXTP560 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Power - Max | 2.8W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 60MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 500mV |
| Max Collector Current | 150mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 50mA 10V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 50mA |
| Collector Emitter Breakdown Voltage | 500V |
| Transition Frequency | 60MHz |
| Collector Emitter Saturation Voltage | -200mV |
| Max Breakdown Voltage | 500V |
| Collector Base Voltage (VCBO) | -500V |
| Emitter Base Voltage (VEBO) | -7V |
| Continuous Collector Current | -150mA |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
DXTP560BP5-13 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 80 @ 50mA 10V.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at -150mA to achieve high efficiency.Emitter base voltages of -7V can achieve high levels of efficiency.A transition frequency of 60MHz is present in the part.Input voltage breakdown is available at 500V volts.A maximum collector current of 150mA volts is possible.
DXTP560BP5-13 Features
the DC current gain for this device is 80 @ 50mA 10V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 10mA, 50mA
the emitter base voltage is kept at -7V
a transition frequency of 60MHz
DXTP560BP5-13 Applications
There are a lot of Diodes Incorporated DXTP560BP5-13 applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
