DXTP19020DP5-13

DXTP19020DP5-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-DXTP19020DP5-13
  • Package: PowerDI™ 5
  • Datasheet: pdf
  • Stock: 9353
  • Description: DXTP19020DP5-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerDI™ 5
Number of Pins 5
Transistor Element Material SILICON
Manufacturer Package Identifier POWERDI-5
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 3W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DXTP19020
Pin Count 3
JESD-30 Code R-PDSO-F3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Power - Max 3W
Transistor Application SWITCHING
Gain Bandwidth Product 176MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 275mV
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 275mV @ 800mA, 8A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 176MHz
Collector Emitter Saturation Voltage -1.15V
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) -25V
Emitter Base Voltage (VEBO) -7V
Continuous Collector Current -8A
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

DXTP19020DP5-13 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 100mA 2V.With a collector emitter saturation voltage of -1.15V, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 275mV @ 800mA, 8A.Maintaining the continuous collector voltage at -8A is essential for high efficiency.Keeping the emitter base voltage at -7V can result in a high level of efficiency.As you can see, the part has a transition frequency of 176MHz.A breakdown input voltage of 20V volts can be used.When collector current reaches its maximum, it can reach 8A volts.

DXTP19020DP5-13 Features


the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -1.15V
the vce saturation(Max) is 275mV @ 800mA, 8A
the emitter base voltage is kept at -7V
a transition frequency of 176MHz

DXTP19020DP5-13 Applications


There are a lot of Diodes Incorporated DXTP19020DP5-13 applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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