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DXTN07100BP5-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-DXTN07100BP5-13
- Package: PowerDI™ 5
- Datasheet:
- Stock: 7020
- Description: DXTN07100BP5-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerDI™ 5 |
| Number of Pins | 3 |
| Weight | 95.991485mg |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | POWERDI-5 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 3.2W |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 175MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 3.2W |
| Power - Max | 740mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 175MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| JEDEC-95 Code | TO-252 |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 175MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | 120V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 100 |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
DXTN07100BP5-13 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.With the emitter base voltage set at 7V, an efficient operation can be achieved.175MHz is present in the transition frequency.The breakdown input voltage is 100V volts.When collector current reaches its maximum, it can reach 2A volts.
DXTN07100BP5-13 Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 175MHz
DXTN07100BP5-13 Applications
There are a lot of Diodes Incorporated DXTN07100BP5-13 applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
