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DXT790AP5-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-DXT790AP5-13
- Package: PowerDI™ 5
- Datasheet:
- Stock: 2112
- Description: DXT790AP5-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerDI™ 5 |
| Number of Pins | 3 |
| Weight | 95.991485mg |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | POWERDI-5 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 3.2W |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 100MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | DXT790 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 3.2W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 10mA 2V |
| Current - Collector Cutoff (Max) | 20nA |
| JEDEC-95 Code | TO-252 |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 300mA, 3A |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | -170mV |
| Max Breakdown Voltage | 40V |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 300 |
| Continuous Collector Current | -3A |
| Height | 1.15mm |
| Length | 4.05mm |
| Width | 5.45mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
DXT790AP5-13 Overview
DC current gain in this device equals 300 @ 10mA 2V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -170mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 450mV @ 300mA, 3A means Ic has reached its maximum value(saturated).Continuous collector voltages of -3A should be maintained to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.In this part, there is a transition frequency of 100MHz.There is a breakdown input voltage of 40V volts that it can take.In extreme cases, the collector current can be as low as 3A volts.
DXT790AP5-13 Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -170mV
the vce saturation(Max) is 450mV @ 300mA, 3A
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
DXT790AP5-13 Applications
There are a lot of Diodes Incorporated DXT790AP5-13 applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
