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DXT3904-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-DXT3904-13
- Package: TO-243AA
- Datasheet:
- Stock: 8684
- Description: DXT3904-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 300MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 300MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 200mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA 1V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 300MHz |
| Collector Emitter Saturation Voltage | 300mV |
| Max Breakdown Voltage | 40V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 6V |
| Turn Off Time-Max (toff) | 250ns |
| Turn On Time-Max (ton) | 70ns |
| Height | 1.5mm |
| Length | 4.5mm |
| Width | 2.48mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 19 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 3 |
| Weight | 51.993025mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
DXT3904-13 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 5mA, 50mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A transition frequency of 300MHz is present in the part.This device can take an input voltage of 40V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
DXT3904-13 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
DXT3904-13 Applications
There are a lot of Diodes Incorporated DXT3904-13 applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
