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DXT2011P5-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-DXT2011P5-13
- Package: PowerDI™ 5
- Datasheet:
- Stock: 8011
- Description: DXT2011P5-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | 200V |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | 6A |
| Height | 1.15mm |
| Length | 4.05mm |
| Width | 5.45mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerDI™ 5 |
| Number of Pins | 3 |
| Weight | 95.991485mg |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | POWERDI-5 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 3.2W |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 130MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | DXT2011P5 |
| Pin Count | 4 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 3.2W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 130MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 6A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A 2V |
| Current - Collector Cutoff (Max) | 20nA ICBO |
| JEDEC-95 Code | TO-252 |
| Vce Saturation (Max) @ Ib, Ic | 220mV @ 500mA, 5A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 130MHz |
| Collector Emitter Saturation Voltage | 220mV |
DXT2011P5-13 Overview
In this device, the DC current gain is 100 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 220mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltages of 6A should be maintained to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 130MHz.A breakdown input voltage of 100V volts can be used.When collector current reaches its maximum, it can reach 6A volts.
DXT2011P5-13 Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 220mV
the vce saturation(Max) is 220mV @ 500mA, 5A
the emitter base voltage is kept at 7V
a transition frequency of 130MHz
DXT2011P5-13 Applications
There are a lot of Diodes Incorporated DXT2011P5-13 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
