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DXT13003DG-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-DXT13003DG-13
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 693
- Description: DXT13003DG-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Max Power Dissipation | 700mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 4MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 400mV |
| Max Collector Current | 1.3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 16 @ 500mA 2V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 250mA, 1A |
| Collector Emitter Breakdown Voltage | 450V |
| Transition Frequency | 4MHz |
| Collector Emitter Saturation Voltage | 400mV |
| Max Breakdown Voltage | 450V |
| Emitter Base Voltage (VEBO) | 9V |
| Continuous Collector Current | 1.3A |
| Turn On Time-Max (ton) | 3700ns |
| RoHS Status | ROHS3 Compliant |
DXT13003DG-13 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 16 @ 500mA 2V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A 1.3A continuous collector voltage is necessary to achieve high efficiency.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.As you can see, the part has a transition frequency of 4MHz.The breakdown input voltage is 450V volts.When collector current reaches its maximum, it can reach 1.3A volts.
DXT13003DG-13 Features
the DC current gain for this device is 16 @ 500mA 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 250mA, 1A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
DXT13003DG-13 Applications
There are a lot of Diodes Incorporated DXT13003DG-13 applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
