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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Packaging | Tape & Reel (TR) |
| Published | 2003 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Length | 1.65mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Contact Plating | Tin |
| Current Rating | 100mA |
| Radiation Hardening | No |
| Number of Pins | 3 |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 0.21 |
| Package / Case | SC-75, SOT-416 |
| REACH SVHC | No SVHC |
| Height | 800μm |
| Width | 900μm |
| Mounting Type | Surface Mount |
| Voltage - Rated DC | 50V |
| JESD-609 Code | e3 |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | DTC114 |
| Pin Count | 3 |
| Surface Mount | YES |
| Subcategory | BIP General Purpose Small Signal |
| Max Power Dissipation | 200mW |
| Number of Elements | 1 |
| Polarity | NPN |
| Halogen Free | Halogen Free |
| Element Configuration | Single |
| Power Dissipation | 200mW |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Transistor Application | SWITCHING |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector Cutoff (Max) | 500nA |
| Collector Emitter Saturation Voltage | 250mV |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 80 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA |
| Resistor - Base (R1) | 10 k Ω |
| Resistor - Emitter Base (R2) | 47 k Ω |
Product Description:
The DTC114YET1G is a high-performance NPN small-signal bipolar transistor designed to amplify and switch electronic signals with precision and reliability. With its compact footprint and advanced features, this transistor is well-suited for various applications where signal amplification and switching are crucial.
Features:
NPN Bipolar Transistor: The DTC114YET1G is an NPN-type bipolar transistor, which means it is designed to amplify signals and switch currents between its collector and emitter terminals.
Low Collector-Emitter Saturation Voltage: This transistor exhibits a low collector-emitter saturation voltage, resulting in minimal voltage drop across the transistor when it is in the saturated state.
High Current Gain: The transistor offers a high current gain, allowing it to amplify weak input signals effectively.
Fast Switching Speed: With its rapid switching characteristics, the DTC114YET1G ensures efficient signal switching, making it suitable for applications with fast-changing signals.
Compact SOT-23 Package: The transistor comes in a small SOT-23 surface-mount package, making it easy to integrate into space-constrained designs.
Applications:
Signal Amplification: The DTC114YET1G is commonly used to amplify weak electronic signals, such as those from sensors, microphones, or other low-level sources.
Switching Circuits: It can be utilized in digital and analog switching circuits to control the flow of current or voltage based on input signals.
Logic Level Shifting: The transistor is employed in logic level shifting applications, where it converts signals from one voltage level to another.
Audio Amplification: It is suitable for audio amplification circuits, helping to amplify audio signals for speakers, headphones, or other audio devices.
Oscillators: The transistor can be integrated into oscillator circuits to generate oscillating signals, such as in clock circuits.
Sensor Interfaces: It is used in sensor interface circuits to amplify and condition signals from various sensors before further processing.
Communication Circuits: The transistor finds applications in communication circuits, such as RF amplifiers or signal processing circuits.
In summary, the DTC114YET1G NPN small-signal bipolar transistor offers features like low collector-emitter saturation voltage, high current gain, and fast switching speed. It is suitable for applications requiring signal amplification, switching, logic level shifting, audio amplification, oscillators, sensor interfaces, and communication circuits. Its compact SOT-23 package and versatile electrical characteristics make it a valuable component in electronic designs aiming for precise signal control and amplification.
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