DTC114YET1G

TRANS PREBIAS NPN 200MW SC75


  • Manufacturer: ON Semiconductor
  • NO: 598-DTC114YET1G
  • Package: SC-75, SOT-416
  • Datasheet: pdf
  • Stock: 7823
  • Description: TRANS PREBIAS NPN 200MW SC75(Kg)

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  • Payment: payment

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SPECIFICATIONS

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Packaging Tape & Reel (TR)
Published 2003
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Length 1.65mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Contact Plating Tin
Current Rating 100mA
Radiation Hardening No
Number of Pins 3
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 0.21
Package / Case SC-75, SOT-416
REACH SVHC No SVHC
Height 800μm
Width 900μm
Mounting Type Surface Mount
Voltage - Rated DC 50V
JESD-609 Code e3
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DTC114
Pin Count 3
Surface Mount YES
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 200mW
Number of Elements 1
Polarity NPN
Halogen Free Halogen Free
Element Configuration Single
Power Dissipation 200mW
Max Breakdown Voltage 50V
Max Collector Current 100mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Voltage (VCEO) 50V
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Current - Collector Cutoff (Max) 500nA
Collector Emitter Saturation Voltage 250mV
Continuous Collector Current 100mA
Emitter Base Voltage (VEBO) 6V
hFE Min 80
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Resistor - Base (R1) 10 k Ω
Resistor - Emitter Base (R2) 47 k Ω

Product Description:

The DTC114YET1G is a high-performance NPN small-signal bipolar transistor designed to amplify and switch electronic signals with precision and reliability. With its compact footprint and advanced features, this transistor is well-suited for various applications where signal amplification and switching are crucial.


Features:


NPN Bipolar Transistor: The DTC114YET1G is an NPN-type bipolar transistor, which means it is designed to amplify signals and switch currents between its collector and emitter terminals.


Low Collector-Emitter Saturation Voltage: This transistor exhibits a low collector-emitter saturation voltage, resulting in minimal voltage drop across the transistor when it is in the saturated state.


High Current Gain: The transistor offers a high current gain, allowing it to amplify weak input signals effectively.


Fast Switching Speed: With its rapid switching characteristics, the DTC114YET1G ensures efficient signal switching, making it suitable for applications with fast-changing signals.


Compact SOT-23 Package: The transistor comes in a small SOT-23 surface-mount package, making it easy to integrate into space-constrained designs.


Applications:


Signal Amplification: The DTC114YET1G is commonly used to amplify weak electronic signals, such as those from sensors, microphones, or other low-level sources.


Switching Circuits: It can be utilized in digital and analog switching circuits to control the flow of current or voltage based on input signals.


Logic Level Shifting: The transistor is employed in logic level shifting applications, where it converts signals from one voltage level to another.


Audio Amplification: It is suitable for audio amplification circuits, helping to amplify audio signals for speakers, headphones, or other audio devices.


Oscillators: The transistor can be integrated into oscillator circuits to generate oscillating signals, such as in clock circuits.


Sensor Interfaces: It is used in sensor interface circuits to amplify and condition signals from various sensors before further processing.


Communication Circuits: The transistor finds applications in communication circuits, such as RF amplifiers or signal processing circuits.


In summary, the DTC114YET1G NPN small-signal bipolar transistor offers features like low collector-emitter saturation voltage, high current gain, and fast switching speed. It is suitable for applications requiring signal amplification, switching, logic level shifting, audio amplification, oscillators, sensor interfaces, and communication circuits. Its compact SOT-23 package and versatile electrical characteristics make it a valuable component in electronic designs aiming for precise signal control and amplification.


In Stock

Please send RFQ , we will respond immediately.