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DSS60601MZ4-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-DSS60601MZ4-13
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 6341
- Description: DSS60601MZ4-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 3 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.2W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 100MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | DSS60601 |
| Pin Count | 4 |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.2W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 6A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1A 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 600mA, 6A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | 300mV |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 150 |
| Height | 1.6mm |
| Length | 6.5mm |
| Width | 3.5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
DSS60601MZ4-13 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 1A 2V.A collector emitter saturation voltage of 300mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.As a result, the part has a transition frequency of 100MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
DSS60601MZ4-13 Features
the DC current gain for this device is 120 @ 1A 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 600mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
DSS60601MZ4-13 Applications
There are a lot of Diodes Incorporated DSS60601MZ4-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
