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ContactDSS4220V-7
DSS4220V-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-DSS4220V-7
- Package: SOT-563, SOT-666
- Datasheet:
- Stock: 3783
- Description: DSS4220V-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Number of Pins | 6 |
| Weight | 3.005049mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Max Power Dissipation | 600mW |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Base Part Number | DSS4220 |
| Pin Count | 6 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 600mW |
| Gain Bandwidth Product | 260MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 20V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A 2V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 20V |
| Transition Frequency | 260MHz |
| Max Breakdown Voltage | 20V |
| Collector Base Voltage (VCBO) | 20V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 220 |
| Height | 600μm |
| Length | 1.6mm |
| Width | 1.2mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
DSS4220V-7 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 1A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 200mA, 2A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 260MHz.The breakdown input voltage is 20V volts.A maximum collector current of 2A volts can be achieved.
DSS4220V-7 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 260MHz
DSS4220V-7 Applications
There are a lot of Diodes Incorporated DSS4220V-7 applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
