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DSS4160V-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-DSS4160V-7
- Package: SOT-563, SOT-666
- Datasheet:
- Stock: 1227
- Description: DSS4160V-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Number of Pins | 6 |
| Weight | 3.005049mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 600mW |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 150MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | DSS4160 |
| Pin Count | 6 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 600mW |
| Gain Bandwidth Product | 150MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA 5V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100mA, 1A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 150MHz |
| Collector Emitter Saturation Voltage | 250mV |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 1A |
| Height | 600μm |
| Length | 1.6mm |
| Width | 1.2mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
DSS4160V-7 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 5V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 100mA, 1A.Continuous collector voltage should be kept at 1A for high efficiency.The emitter base voltage can be kept at 5V for high efficiency.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 60V volts can be used.Maximum collector currents can be below 1A volts.
DSS4160V-7 Features
the DC current gain for this device is 200 @ 500mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
DSS4160V-7 Applications
There are a lot of Diodes Incorporated DSS4160V-7 applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
