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DSS3540M-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-DSS3540M-7B
- Package: 3-UFDFN
- Datasheet:
- Stock: 770
- Description: DSS3540M-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-UFDFN |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 250mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 100MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | DSS3540M |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 250mW |
| Case Connection | COLLECTOR |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 100mA 2V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | -350mV |
| Max Breakdown Voltage | 40V |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | -6V |
| Continuous Collector Current | -500mA |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
DSS3540M-7B Overview
In this device, the DC current gain is 150 @ 100mA 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -350mV, giving you a wide variety of design options.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at -500mA to achieve high efficiency.Keeping the emitter base voltage at -6V can result in a high level of efficiency.A transition frequency of 100MHz is present in the part.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 500mA volts.
DSS3540M-7B Features
the DC current gain for this device is 150 @ 100mA 2V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 100MHz
DSS3540M-7B Applications
There are a lot of Diodes Incorporated DSS3540M-7B applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
