DSS20201L-7

DSS20201L-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-DSS20201L-7
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 4864
  • Description: DSS20201L-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 600mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 150MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DSS20201
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 600mW
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 100mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 100mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 6V
Turn On Time-Max (ton) 200ns
Height 1mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

DSS20201L-7 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 100mV.When VCE saturation is 100mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 6V to gain high efficiency.As you can see, the part has a transition frequency of 150MHz.Single BJT transistor can be broken down at a voltage of 20V volts.A maximum collector current of 2A volts can be achieved.

DSS20201L-7 Features


the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 100mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz

DSS20201L-7 Applications


There are a lot of Diodes Incorporated DSS20201L-7 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

In Stock

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